Realization of Complex III-V Nanoscale Heterostructures English 2014
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Thema:
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Low-dimensional III-V semiconductor nanoscale structures grown by epitaxial processes have emerged as a new class of materials with great promise for various device applications. This thesis describes explorations into the heteroepitaxial growth of III-V semiconductor materials in combination with other III-V materials and also with the commonly used Si material, in both thin layer and nanowire geometries.
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